FDMS8880 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 21 A, 8.5 mΩ

Typical Characteristics T_J = 25 °C unless otherwise noted
80
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V_GS = 10 V
60
V_GS = 6 V
V_GS = 4.5 V
V_GS = 3.5 V
40
20
V_GS = 3 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V_GS = 3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
V_GS = 3.5 V
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D = 13.5 A
1.6 ^{VGS = 10 V}
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
40
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
I_D = 13.5 A
20
T_J = 150 ^oC
10
T_J = 25 ^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
80
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
V_DS = 5 V
40
T_J = 150 ^oC
T_J = 25 ^oC
20
T_J = -55 ^oC
0
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V_GS = 0 V
10
1
0.1
T_J = 175 ^oC
0.01
T_J = 25 ^oC
T_J = -55 ^oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
3
FDMS8880 Rev.C
www.fairchildsemi.com