FDMS8674 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
150
V_GS = 10V
120
V_GS = 4V
V_GS = 5V
90
V_GS = 4.5V
60
V_GS = 3.5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
V_GS = 3.5V
2.5
2.0
V_GS = 4V
V_GS = 5V
V_GS = 4.5V
1.5
1.0
0.5
0
V_GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
60
90
120
150
I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
I_D = 17A
1.6 ^{VGS = 10V}
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
14
I_D = 17A
PULSE DURATION = 80µs
12
DUTY CYCLE = 0.5%MAX
10
8
T_J = 125^oC
6
4
T_J = 25^oC
2
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
120
V_DS = 5V
90
60
T_J = 150^oC
30
T_J = 25^oC
T_J = -55^oC
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
200
100
V_GS = 0V
10
T_J = 150^oC
1
T_J = 25^oC
0.1
0.01
T_J = -55^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
3
FDMS8674 Rev.B
www.fairchildsemi.com