FDMS86320 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
50
40
30
20
10
0
0
V_GS = 8 V
V_GS = 7 V
V_GS = 10V
V_GS = 6.5 V
V_GS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
5
V_GS = 6 V
4
3
V_GS = 6.5 V
2
V_GS = 7 V
V_GS = 8 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
10
20
30
I_D, DRAIN CURRENT (A)
V_GS = 10 V
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
1.6 ^{ID = 10.5 A}
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
40
PULSE DURATION = 80 μs
I_D = 10.5 A _{DUTY CYCLE = 0.5% MAX}
30
T_J = 125 ^oC
20
10
T_J = 25 ^oC
0
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
V_DS = 5 V
30
20
10
0
3
T_J = 150 ^oC
T_J = 25 ^oC
T_J = -55 ^oC
4
5
6
7
8
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V_GS = 0 V
10
T_J = 150 ^oC
1
T_J = 25 ^oC
0.1
0.01
T_J = -55 ^oC
0.001
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS86320 Rev.C
3
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