FDMS3672 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm

Typical Characteristics T_J = 25°C unless otherwise noted
60
V_GS = 10V
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V_GS = 8V
40
V_GS = 6V
30
20
V_GS = 5V
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
V_GS = 5V
V_GS = 6V
2.0
1.5
V_GS = 8V
1.0
0.5
0
V_GS = 10V
10
20
30
40
50
60
I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
I_D = 7.4A
1.8 V_GS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
60
I_D = 7.4A PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
T_J = 150^oC
40
30
T_J = 25^oC
20
10
4.5
6.0
7.5
9.0
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
PULSE DURATION = 80µs
25 ^{DUTY CYCLE = 0.5%MAX}
20
T_J = 150^oC
15
10
T_J = 25^oC
5
T_J = -55^oC
0
2
3
4
5
6
7
8
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
V_GS = 0V
10
T_J = 150^oC
1
0.1
T_J = 25^oC
0.01
T_J = -55^oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS3672 Rev.C
3
www.fairchildsemi.com