FDMS3660AS Datasheet, PDF (3/13 Pages) Fairchild Semiconductor – PowerTrench® Power Stage

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
V_SD
t_rr
Q_rr
Notes:
V_GS = 0 V, I_S = 13 A
Source to Drain Diode
Forward Voltage
V_GS = 0 V, I_S = 2 A
V_GS = 0 V, I_S = 30 A
V_GS = 0 V, I_S = 2 A
(Note 2) Q1
(Note 2) Q1
(Note 2) Q2
(Note 2) Q2
Reverse Recovery Time
Reverse Recovery Charge
Q1:
Q1
I_F = 13 A, di/dt = 100 A/μs
Q2
Q2:
Q1
I_F = 30 A, di/dt = 300 A/μs
Q2
0.84 1.2
0.74 1.2
0.77 1.2
V
0.48 1.2
25
33
40
53
ns
9
41
18
66
nC
1.R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a. 57 °C/W when mounted on
a 1 in² pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in² pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.
4. Pulsed Id limited by junction temperature, td<=100 μS, please refer to SOA curve for more details.
5.
6.
E_AS
E_AS
of
of
71350mmJJisisbbaaseseddoonnstsatartrintinggTT_{J J}==2525^oC_{oC; ;NN-c-hch: :LL==33mmHH,} I,_AISAS==71A0,
V_DD = 30 V,
A, V_DD = 30
V_GS = 10 V.
V, V_GS = 10
100% test at
V. 100% test
L= 0.1 mH, I_AS = 23 A.
at L= 0.1 mH, I_AS = 31
A.
©2013 Fairchild Semiconductor Corporation
3
FDMS3660AS Rev.C
www.fairchildsemi.com