FDMS2380 Datasheet, PDF (3/15 Pages) Fairchild Semiconductor – Dual Integrated Solenoid Driver

Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
I_OUT(rev)
V_BATT(max)
I_IN
V_IN(max)
I_DIAG
V_DIAG(max)
Maximum Reverse Output Current
Maximum DC Supply Voltage (Note 2)
Input Currents
Maximum Input Voltage
Diagnostic Output Current
Maximum Diagnostic Output Voltage
Total Power dissipation
P_D
T_J, T_STG
Power dissipation V_BATT pad
Power dissipation OUT pads: P_D(OUT) = P_D(OUT1) + P_D(OUT2)
Operating and Storage Temperature
Ratings
-4
60
10
8
10
8
7
2.3
4.6
-40 to 160
Units
A
V
mA
V
mA
V
W
W
W
o_C
Thermal Characteristics
R_θJC
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case: OUT pad
Thermal Resistance Junction to Case: V_BATT pad
Thermal Resistance Junction to Ambient: OUT pad (Note 1)
Thermal Resistance Junction to Ambient: V_BATT pad (Note 1)
3.5
o_C/W
4.0
o_C/W
60
o_C/W
60
o_C/W
Ordering Information
Part Number
FDMS2380
Package
18 pin QFN
Packing
Method
Tape & Reel
Reel Size
330mm
Tape Width
24mm
Quantity
2000
Notes:
1. R_θJA is measured with 1.0 in² copper on FR-4 board. R_θJC is guaranteed by design while R_θJA is determined by the user’s board design.
2. The FDMS2380 requires one or more high quality local bypass capacitors (i.e., low ESL, low ESR and located physically close to the VBATT/Ground terminals of
the device) to prevent fast transients on the V_BATT line from affecting the operation of the device. More specifically, the bypass scheme must reduce transients
with an amplitude passing through V_BATT(ov) to have a rise time of less than 2.2V/µs.
FDMS2380 Rev. A
3
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