FDMD82100L Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET

Typical Characteristics (N-Channel) T_J = 25 °C unless otherwise noted
80
V_GS = 10 V
V_GS = 6 V
60
V_GS = 4.5 V
V_GS = 4 V
40
V_GS = 3.5 V
20
V_GS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
5
V_GS = 3 V
4
3
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V_GS = 3.5 V
V_GS = 4 V
1
V_GS = 4.5 V V_GS = 6 V V_GS = 10 V
0
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
I_D = 7 A
V_GS = 10 V
2.0
1.6
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
I_D = 7 A
60
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
80
T_J = -55 ^oC
60
T_J = 150 ^oC
T_J = 25 ^oC
40
20
0
1
V_DS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
40
20
0
2
T_J = 125 ^oC
T_J = 25 ^oC
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
80
V_GS = 0 V
10
T_J = 150 ^oC
1
0.1
0.01
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2014 Fairchild Semiconductor Corporation
3
FDMD82100L Rev.C1
www.fairchildsemi.com