FDMC86265P Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
2.0
V_GS = -10 V
V_GS = -8 V
1.5
V_GS = -6 V
V_GS = -5 V
1.0
0.5
0.0
0
V_GS = -4.5 V PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
2
3
4
5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.0
2.5
V_GS = -4.5 V
2.0
1.5
1.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V_GS = -5 V
V_GS = -6 V
V_GS = -8 V V_GS = -10 V
0.5
0.0
0.5
1.0
1.5
2.0
-I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
2.0 ^ID ^{= -1 A}
1.8 ^{VGS = -10 V}
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
4000
3000
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I_D = -1 A
2000
T_J = 125 ^oC
1000
0
4
T_J = 25 ^oC
5
6
7
8
9
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
V_DS = -5 V
T_J = 150 ^oC
1.0
0.5
T_J = 25 ^oC
T_J = -55 ^oC
0.0
2
3
4
5
6
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
V_GS = 0 V
1
T_J = 150 ^oC
0.1
0.01
T_J = 25 ^oC
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2014 Fairchild Semiconductor Corporation
3
FDMC86265P Rev.C
www.fairchildsemi.com