FDMC86102LZ Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
30
V_GS = 10 V
25
V_GS = 4.5 V
20
V_GS = 3.5 V
V_GS = 3 V
15
10
5
0
0.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V_GS = 2.5 V
0.5 1.0 1.5 2.0 2.5 3.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
8
7
V_GS = 2.5 V
6
5
4
V_GS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
V_GS = 3.5 V
2
1
V_GS = 4.5 V V_GS = 10 V
0
0
5
10
15
20
25
30
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
1.8
I_D = 6.5 A
V_GS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On-Resistance
vs Junction Temperature
100
I_D = 6.5 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
60
T_J = 125 ^oC
40
20
T_J = 25 ^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
V_DS = 5 V
20
15
T_J = 150 ^oC
10
T_J = 25 ^oC
5
T_J = -55 ^oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
30
10 ^{VGS = 0 V}
T_J = 150 ^oC
1
0.1
T_J = 25 ^oC
0.01
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
3
FDMC86102LZ Rev. C
www.fairchildsemi.com