FDMC7672S Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel Power Trench SyncFETTM

Typical Characteristics T_J = 25 °C unless otherwise noted
45
V_GS = 10 V
36
27
18
9
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V_GS = 6 V
V_GS = 4.5 V
V_GS = 4 V
V_GS = 3.5 V
V_GS = 3 V
0
0
0.2
0.4
0.6
0.8
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
V_GS = 3 V
3.5
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
3.0
2.5
2.0
V_GS = 3.5 V
1.5
V_GS = 4 V
1.0
0.5
0
V_GS = 4.5 V V_GS = 6 V
V_GS = 10 V
9
18
27
36
45
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
I_D = 14.8 A
V_GS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
15
I_D = 14.8 A ^{PULSE DURATION = 80 Ps}
DUTY CYCLE = 0.5% MAX
12
9
T_J = 125 ^oC
6
T_J = 25 ^oC
3
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
45
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
36
V_DS = 5 V
27
T_J = 125 ^oC
18
T_J = 25 ^oC
100
V_GS = 0 V
10
T_J = 125 ^oC
1
0.1
T_J = 25 ^oC
9
T_J = -55 ^oC
0
1
2
3
4
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0.01
T_J = -55 ^oC
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
3
FDMC7672S Rev.C3
www.fairchildsemi.com