FDFMA2N028Z Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Integrated N-Channel PowerTrench MOSFET and Schottky Diode

Electrical Characteristics T_J = 25°C unless otherwise noted
Notes:
1: R_θJA is determined with the device mounted on a 1in² pad 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θJA is determined
by the user's board design.
(a) MOSFET R_θJA = 86^oC/W when mounted on a 1in² pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
(b) MOSFET R_θJA = 173^oC/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky R_θJA = 86^oC/W when mounted on a 1in² pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
(d) Schottky R_θJA = 140^oC/W when mounted on a minimum pad of 2 oz copper.
a)86^oC/W
when mounted
on a 1in² pad of
2 oz copper.
b)173^oC/W
when mounted
on a minimum
pad of 2 oz
copper.
c)86^oC/W when
mounted on a
1in² pad of 2 oz
copper.
d)140^oC/W
when mounted
on a minimum
pad of 2 oz
copper.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDFMA2N028Z Rev.B
3
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