FDD3860_08 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
60
V_GS = 10V
50
V_GS = 8V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V_GS = 7V
30
20
10
V_GS = 6V
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
V_GS = 6V
V_GS = 7V
2.0
V_GS = 8V
1.5
1.0
V_GS = 10V
0.5
0
10
20
30
40
50
60
I_D, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
2.0 ^{ID = 5.9A}
V_GS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
V_DS = 10V
40
30
T_J = 150^oC
20
T_J = 25^oC
10
T_J = -55^oC
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
I_D = 5.9A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
60
T_J = 125^oC
40
20
T_J = 25^oC
0
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V_GS = 0V
10
1
T_J = 150^oC
0.1
0.01
T_J = 25^oC
T_J = -55^oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
3
FDD3860 Rev.C1
www.fairchildsemi.com