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FD6M016N03 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 30V/80A Synchronous Rectifier Module
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Electrical Characteristics TC = 25°C, Unless Otherwise Specified
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Synchronous Rectifier Switch Part (Each Switch)
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Drain to Source On Resistance
ID= 250μA, VGS = 0V
VGS = 0V, VDS = 24V
VGS = ±20V
VD = 5V, IDS = 250μA
ID = 40A, VGS = 10V
30
-
-
1
-
TJ = 150°C
-
-
-
-
1
-
±100
-
3
1.3
1.6
1.96
-
Dynamic Charateristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “MIller” Charge
Switching Charateristics (VGS = 5V)
tON
td(on)
tr
td(off)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Charateristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDS = 15V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 15V
ID = 40A
Ig = 1.0mA
ID = 40A
VGS = 5V, VDD = 15V, RG = 2.5Ω
ISD = 80A, VGS = 0V
ISD = 40A, VGS = 0V
ISD = 40A, dISD/dt = 100A/μs
ISD = 40A, dISD/dt = 100A/μs
- 11535 -
- 2195
-
- 1580
-
-
227 295
-
121 158
-
9.3
13
-
29
-
-
20
-
-
46
-
-
-
165
-
26
-
-
65
-
-
90
-
-
60
-
-
-
255
-
-
1.25
-
-
1.0
-
38
-
-
32
-
Units
V
μA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
V
ns
nC
FD6M016N03 Rev. A
3
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