FCH47N60F Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
V
GS
Top : 15.0 V
10²
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10¹
10⁰
10^-1
* Notes :
1. 250祍 Pulse Test
2. T = 25°C
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
10²
10¹
10⁰
2
150°C
25°C
-55°C
- Note
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10²
0.15
V_GS = 10V
0.10
0.05
0.00
0
V_GS = 20V
* Note : T_J = 25°C
20 40 60 80 100 120 140 160 180 200
I_D, Drain Current [A]
10¹
10⁰
0.2
150°C
25°C
* Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
25000
20000
C_oss
15000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
10000
C_iss
* Notes :
1. V_GS = 0 V
2. f = 1 MHz
5000
0
10^-1
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 47A
D
0
0
50
100
150
200
250
Q , Total Gate Charge [nC]
G
3
FCH47N60F Rev. A1
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