FCH072N60F Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – N-Channel SuperFET® II FRFET® MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
V_GS = 10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
1
0.2
1
10 20
VV_DDSS,,DDrraaiinn-tSooSuorcuercVeoVltoalgtaeg[Ve][V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
0.12
0.10
0.08
0.06
V_GS = 10V
V_GS = 20V
0.04
0
*Note: T_C = 25^oC
50
100
150
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
C_iss
1000
C_oss
100 _*Note:
1. V_GS = 0V
2. f = 1MHz
C_rss
10 _{Ciss = Cgs + Cgd (Cds = shorted)}
Coss = Cds + Cgd
C_rss = C_gd
1
0.1
1
10
100
600
VV_DDSS,,DDrraaiinn-tSooSuorucrecVeoVlotaltgaege[V[]V]
Figure 2. Transfer Characteristics
300
*Notes:
1. V_DS = 10V
100 ^{2. 250μs Pulse Test}
150^oC
10
25^oC
-55^oC
1
2
4
6
8
10
V_VGGS,_S,G_Ga_ate_tet_-o_SoS_uo_ru_cr_ece_VoV_lo_talt_ga_eg_[e_V][V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
10
150^oC
25^oC
-55^oC
1
0.10.2
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 120V
8
V_DS = 300V
V_DS = 480V
6
4
2
0
*Note: I_D = 26A
0
30
60
90 120 150 180
Q_g, Total Gate Charge [nC]
©2013 Fairchild Semiconductor Corporation
3
FCH072N60F Rev. C4
www.fairchildsemi.com