FCA36N60NF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel MOSFET, FRFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
V_GS = 15.0 V
100
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
10
*Notes:
1. 250μs Pulse Test
2. T_C = 25^oC
1
0.1
1
10 20
V_DS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
150
125
100
V_GS = 10V
V_GS = 20V
75
*Notes: T_C = 25^oC
50
0
18 36 54 72 90 108
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
C_iss
1000
C_oss
100 _*Notes:
1. V_GS = 0V
2. f = 1MHz
10
C_iss = C_gs + C_gd (C_ds = shorted)
C_rss
C_oss = C_ds + C_gd
C_rss = C_gd
1
0.1
1
10
100
600
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
200
100
10
150^oC
25^oC
1
0.2
2
-55^oC
*Notes:
1. V_DS = 20V
2. 250μs Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
10
150^oC
25^oC
1
0.2
0.2
*Notes:
1. V_GS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
V_SD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
V_DS = 120V
V_DS = 300V
6
V_DS = 480V
4
2
*Notes: I_D = 18A
0
0
20
40
60
80
100
Q_g, Total Gate Charge [nC]
FCA36N60NF Rev. A
3
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