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| FCA16N60_06 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET | |||
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
0.4
V = 10V
GS
0.3
V = 20V
GS
0.2
0.1
0.0
0
* Note : Τ = 25oC
J
5
10 15 20 25 30 35 40 45 50
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
7000
6000
5000
4000
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
C
iss
â Notes :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
102
101
150° )C
25° )C
-55° )C
100
* Note:
1. V = 40V
DS
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150° )C
25° )C
â Notes :
1. V = 0V
GS
2. 250 μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 480V
8
6
4
2
â Note : ID = 16A
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
3
www.fairchildsemi.com
FCA16N60 REV. A1
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