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| CNY171M Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Phototransistor Optocouplers | |||
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Electrical Characteristics (TA = 25°C Unless otherwise speciï¬ed.)(1)
Individual Component Characteristics
Symbol Parameters
Test Conditions
Device
EMITTER
VF Input Forward Voltage IF = 60mA
CNY17XM,
CNY17FXM
CJ Capacitance
IR Reverse Leakage
Current
IF = 10mA
VF = 0 V, f = 1.0MHz
VR = 6V
MOC810XM
All
All
DETECTOR
BVCEO
BVCBO
BVECO
ICEO
ICBO
CCE
CCB
CEB
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
IC = 1.0mA, IF = 0
IC = 10µA, IF = 0
IE = 100µA, IF = 0
VCE = 10 V, IF = 0
VCB = 10 V, IF = 0
VCE = 0, f = 1MHz
VCB = 0, f = 1MHz
VEB = 0, f = 1MHz
All
CNY171M/2M/3M/4M
All
All
CNY171M/2M/3M/4M
All
CNY171M/2M/3M/4M
CNY171M/2M/3M/4M
Min.
1.0
1.0
70
70
7
Typ.
1.35
1.15
18
0.001
100
120
10
1
8
20
10
Max.
1.65
1.50
10
50
20
Units
V
pF
µA
V
nA
nA
pF
pF
pF
Isolation Characteristics
Symbol
Characteristic
VISO Input-Output Isolation Voltage
RISO
CISO
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 sec.,
II-O ⤠2µA(4)
VI-O = 500 VDC(4)
VI-O = Ã, f = 1MHz(4)
Min.
7500
1011
Typ.* Max.
0.2
Units
Vac(pk)
â¦
pF
Transfer Characteristics (TA = 25°C Unless otherwise speciï¬ed.)(3)
Symbol
DC Characteristics
Test Conditions
COUPLED
(CTR)(2) Output Collector
Current
MOC8106M
MOC8107M
IF = 10mA, VCE = 10V
CNY17F1M
CNY17F2M
IF = 10mA, VCE = 5V
CNY17F3M
CNY17F4M
CNY171M
CNY172M
CNY173M
CNY174M
VCE(sat) Collector-Emitter CNY17XM/FXM
Saturation Voltage MOC8106M/7M
*All typicals at TA = 25°C
IC = 2.5mA, IF = 10mA
IC = 500µA, IF = 5.0mA
Min. Typ.* Max. Units
50
150 %
100
300
40
80
63
125
100
200
160
320
40
80
63
125
100
200
160
320
0.4 V
©2006 Fairchild Semiconductor Corporation
CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7
3
www.fairchildsemi.com
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