BS170 Datasheet, PDF (3/5 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement)

Typical Electrical Characteristics
BS170 / MMBF170
2
VGS = 10V
9.0 _8.0
7.0
1.5
6.0
1
5.0
0.5
4.0
0
0
1
2
3
4
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3.0
5
3
V_GS =4.0V
4.5
2.5
5.0
2
1.5
1
6 .0
7.0
8.0
9.0
10
0.5
0
0.4
0.8
1.2
1.6
2
I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
2
1.75
1.5
V _GS = 10V
I_D = 500mA
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
3
V_GS = 10V
2.5
TJ = 125°C
2
1.5
25°C
1
-55°C
0.5
0
0
0.4
0.8
1.2
1.6
2
I _D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
2
V_DS = 10V
1.6
T _J = -55°C
25°C
125°C
1.2
0.8
0.4
0
0
2
4
6
8
10
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.1
1.05
1
V _DS = V_GS
I D = 1 mA
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100 125 150
T_J , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
BS170 Rev. C / MMBF170 Rev. D