BCV26 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP Darlington transistors

Typical Characteristics (continued)
PNP Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
- 40 ºC
1.2
25 °C
125 ºC
0.8
0.4
0
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 ºC
1.2
0.8
25 °C
125 ºC
0.4
V _CE = 5V
0
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 15V
CB
10
1
0.1
0.01
25
50
75
100
125
T_A- AMBIENT TEMPERATURE (º C)
Input and Output Capacitance
vs Reverse Bias Voltage
16
f = 1.0 MHz
12
8
C _ib
4
C _ob
0
0.1
1
10
100
REVERSE VOLTAGE (V)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
SOT-23
25
50
75
100
125
150
TEMPERATURE (^oC)