BCP54 Datasheet, PDF (3/4 Pages) NXP Semiconductors – NPN medium power transistors

Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.001
- 40 ºC
25°C
125 ºC
V_CE = 5V
0.01
0.1
1
I _C - COLLECTOR CURRENT (A)
P
Collector-Cutoff Current
vs Ambient Temperature
100
V_CB = 40V
10
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (ºC)
Gain Bandwidth Product
vs Collector Current
500
V _CE = 10V
400
300
200
100
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.001
- 40 ºC
25°C
125 ºC
V_CE = 5V
0.01
0.1
1
I - COLLECTOR CURRENT (A)
C
P 38
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
20
10
0
0
4
8
12
16
20
24
28
V _CB- COLLECTOR-BASE VOLTAGE (V)
Pr 38
1.5
1.25
1
0.75
0.5
0.25
0
0
Power Dissipation vs
Ambient Temperature
SOT-223
25
50
75
100
125
150
TEMPERATURE (^o C)