2N7002K_12 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
2.0
V = 10V
GS
1.5
5V
4V
1.0
3V
0.5
2V
0.0
0
2
4
6
8
10
V . DRAIN-SOURCE VOLTAGE (V)
DS
Figure 3. On-Resistance Variation with
Temperature
3.0
V = 10V
DS
I = 500 mA
D
2.5
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
V = 3V
GS
4V
2.5
4.5V
5V
2.0
7V
6V
1.5
1.0
0.5
0.0
10V
9V
8V
0.2
0.4
0.6
0.8
1.0
I . DRAIN-SOURCE CURRENT(A)
D
Figure 4. On-Resistance Variation with
Gate-Source Voltage
2.0
1.5
1.0
0.5
-50
0
50
100
150
T . JUNCTION TEMPERATURE(oC)
J
Figure 5. Transfer Characteristics
1.0
V = 10V
DS
25(^oC)
0.8
T = -25(oC)
J
0.6
150(^oC)
125(^oC)
0.4
75(^oC)
0.2
Figure 6. Gate Threshold Variation with
Temperature
2.0
1.8
I = 1 mA
D
1.6
I = 0.25 mA
D
V =V
DS
GS
1.4
1.2
0.0
2
3
4
5
6
V . GATE-SOURCE VOLTAGE (V)
GS
1.0
-50
0
50
100
150
T . JUNCTION TEMPERATURE(oC)
J
© 2011 Fairchild Semiconductor Corporation
2N7002K Rev. A3
3
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