2N5088 Datasheet, PDF (3/7 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

Typical Characteristics
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 °C
V _CE = 5.0 V
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03 0.1 0.3 1 3 10 30 100
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 _{β = 10}
0.2
0.15
0.1
0.05
25 °C
125 °C
- 40 °C
0.1
1
10
100
I _C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
β = 10
1
10
100
I _C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 °C
25 °C
125 °C
V _CE = 5.0 V
1
10
40
I _C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
10
V_CB = 45V
1
0.1
25
50
75
100
125
150
T_A - AMBIE NT TEMP ERATURE (_°C)