TIP145 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Typical Characteristics
-10
-9
-8
IB = -1800µA
-7
IB = -2000µA
IB = -1600µA
IB = -1400µA
-6
IB = -1200µA
IB = -1000µA
-5
IB = -800µA
-4
-3
IB = -600µA
-2
-1
IB = -400µA
-0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
VBE(sat)
-1
VCE(sat)
IC=-500IB
-0.1
-0.01
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
DC
-1
-0.1
-1
TIP140
TIP141
TIP142
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
100000
10000
VCE = -4V
1000
100
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
f=0.1MHz
-100
-10
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
-1000
Figure 4. Collector Output Capacitance
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000