TIP115 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Typical Characteristics
-5
IB = -1000 uA
IB = -900 uA
-4 IB = -800 uA
IB = -700 uA
IB = -600 uA
-3 I_B = -500 uA
-2
-1
IB ^{= -400 uA}
IB = -300 uA
IB = -200 uA
IB = -100 uA
-0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-100
IC = 500 IB
-10
VBE(sat)
-1
VCE(sat)
-0.1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-10
DC
-1
-0.1
-1
TIP 115
TIP 116
TIP 117
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10k
VCE = -4V
1k
100
10
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
1000
100
f = 0.1 MHz
10
1
-0.01
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001