TIP105 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Typical Characteristics
-5
IB = -1000 uA
-4 ^{IB = -900 uA}
-3
IB = -800 uA
IB = -700 uA
IB = -600 uA
IB = -500 uA
IB = -400 uA
-2
IB = -300 uA
-1
IB = -200 uA
-0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-100k
-10k
IC = 500 IB
VBE(sat)
-1k
VCE(sat)
-100
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
1ms
-10
DC
-1
-0.1
-0.01
-0.1
TIP105
TIP106
TIP107
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10k
VCE = -4V
1k
100
-0.1
-1
-10
Ic[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10k
f = 0.1 MHz
IE = 0
1k
100
10
1
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001