SSS5N60A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

SSS5N60A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25℃ unless otherwise specified)
Symbol
BV_DSS
ΔBV/ΔT_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage 600 --
Breakdown Voltage Temp. Coeff. 0.66 --
Gate Threshold Voltage
2.0 --
Gate-Source Leakage , Forward -- --
Gate-Source Leakage , Reverse -- --
-- --
Drain-to-Source Leakage Current
--
--
--
4.0
100
-100
25
250
V
V/℃
V
nA
μA
V_GS=0V,I_D=250μA
I_D=250μA See Fig 7
V_DS=5V,I_D=250μA
V_GS=30V
V_GS=-30V
V_DS=600V
V_DS=480V,T_C=125℃
Static Drain-Source
On-State Resistance
-- -- 2.2 _Ω V_GS=10V,I_D=1.3A ④
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.03 -- _S V_DS=50V,I_D=1.3A ④
-- 625 810
-- 70 105 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 28 40
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
-- 17 50
V_DD=300V,I_D=2.6A,
-- 52 120 ^{ns RG=12Ω}
See Fig 13 ④ ⑤
-- 24 60
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
-- 31 40
-- 4.1 --
-- 15.4 --
V_DS=480V,V_GS=10V,
nC I_D=2.6A
See Fig 6 & Fig 12 ④ ⑤
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
① --
-- 2.6
Integral reverse pn-diode
A
-- 10
in the MOSFET
④ -- -- 1.4 V T_J=25℃,I_S=2.6A,V_GS=0V
-- 360 -- ns T_J=25℃,I_F=4.5A
-- 2.39 -- μC di_F/dt=100A/μs
④
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=90mH, I_AS=2.6A, V_DD=50V, R_G=27Ω, Starting T_J =25℃
③ I_SD≤2.6A, di/dt≤100A/μs, V_DD≤BV_DSS , Starting T_J =25℃
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature