SSP70N10A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel Power MOSFET

SSP70N10A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25^ΟC unless otherwise specified)
Symbol
BV_DSS
∆BV/ ∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- --
-- 0.12 --
2.0 -- 4.0
V V_GS=0V,I_D=250 ^µA
V/^ΟC I_D=250^µA See Fig 7
V V_DS=5V,I_D=250 ^µA
-- -- 100 _nA ^VGS^=20V
-- -- -100
V_GS=-20V
-- -- 10
V_DS=100V
--
-- 100 ^{µ A V}DS^=80V,TC^=150ΟC
-- -- 0.023 Ω V_GS=10V,I_D=27.5A O⁴
-- 49.9 --
Ω ^VDS^=40V,ID^=27.5A
O⁴
-- 3750 4870
-- 850 980 _pF ^{VGS=0V,VDS=25V,f =1MHz}
See Fig 5
-- 375 430
-- 22 60
-- 24 60
V_DD=50V,I_D=70A,
-- 112 240 ^{ns RG=5.3Ω}
See Fig 13
-- 84 180
O⁴ O5
-- 151 195
V_DS=80V,V_GS=10V,
-- 31 -- nC I_D=70A
-- 66 --
See Fig 6 & Fig 12 ^{O4 O5}
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O¹ --
-- 55
Integral reverse pn-diode
A
-- 220
in the MOSFET
O⁴ -- -- 1.6 V T_J=25^ΟC,I_S=55A,V_GS=0V
-- 143 -- ns T_J=25^ΟC ,I_F=70A
-- 0.72 -- ^µC di_F/dt=100A/ µs
O⁴
Notes ;
O^{1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature}
O^{2 L=0.8mH, I}AS^{=55A, V}DD^{=25V, R}G^{=27 Ω, Starting T}J ^{=25 oC}
O^{3 I}SD ^{<_ 70A, di/dt <_ 530A/µs, V}DD^{<_ BV}DSS ^{, Starting T}J ^=25oC
O^{4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%}
O^{5 Essentially Independent of Operating Temperature}