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SSH6N90A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET
SSH6N90A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25 ΟC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
900 -- -- V VGS=0V,ID=250µA
-- 1.10 -- V/ ΟC ID=250µA See Fig 7
2.0 -- 3.5 V VDS=5V,ID=250µA
-- -- 100 nA VGS=30V
-- -- -100
VGS=-30V
-- -- 25
VDS=900V
-- -- 250 µA VDS=720V,TC=125 ΟC
-- -- 2.3 Ω VGS=10V,ID=3A
O4 *
-- 4.28 -- Ω VDS=50V,ID=3A
O4
-- 1560 2030
--
135 160
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 54 63
-- 22 55
-- 40 90
VDD=450V,ID=6A,
-- 99 210 ns RG=11.5Ω
-- 32 75
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 68 89
-- 11.5 --
-- 30.9 --
VDS=720V,VGS=10V,
nC ID=6A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 6
-- 24
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=6A,VGS=0V
-- 580 -- ns TJ=25 ΟC ,IF=6A
-- 7.34 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=35mH, IAS=6A, VDD=50V, RG=27Ω, Starting TJ =25 ΟC
O3 ISD <_ 6A, di/dt <_140A/ µs, VDD <_ BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature