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SGS13N60UF Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 6.5mA, VCE = VGE
IC = 6.5A, VGE = 15V
IC = 13A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 6.5A,
RG = 50Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 6.5A,
RG = 50Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 6.5A,
VGE = 15V
Measured 5mm from PKG
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250
µA
--
-- ± 100 nA
3.5
4.5
6.5
V
--
2.1 2.6
V
--
2.6
--
V
--
375
--
pF
--
63
--
pF
--
13
--
pF
--
20
--
ns
--
27
--
ns
--
70 130
ns
--
97 150
ns
--
85
--
µJ
--
95
--
µJ
--
180 270
µJ
--
30
--
ns
--
32
--
ns
--
85 200
ns
--
168 250
ns
--
180
--
µJ
--
165
--
µJ
--
345 500
µJ
--
25
35
nC
--
7
12
nC
--
8
14
nC
--
7.5
--
nH
©2001 Fairchild Semiconductor Corporation
SGS13N60UF Rev. A
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