SGR20N40L Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – General Description

Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV_CES
I_CES
I_GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
V_GE(th)
V_CE(sat)
G-E Threshold Voltage
C-E Saturation Current
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
* Notes : Recommendation of R_G Value : R_G≥15Ω
V_GE = 0V, I_C = 1mA
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
I_C = 1mA, V_CE = V_GE
I_C = 150A, V_GE = 4.5V
V_GE = 0V, V_CE = 30V,
f = 1MHz
V_CC = 300V, I_C = 150A,
V_GE = 4.5V, R_G = 15Ω*
Resistive Load
450
--
--
V
--
--
10
µA
--
-- ± 0.1 µA
0.5
1.0
1.4
V
2.0
4.5
8.0
V
-- 3800 --
pF
--
50
--
pF
--
35
--
pF
--
0.2
--
µs
--
1.7
--
µs
--
0.3 0.5
µs
--
1.5 2.0
µs
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1