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SGR15N40L Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – General Description
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector - Emitter Breakdown Voltage
Collector Cut-Off Current
G - E Leakage Voltage
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G - E Threshold Voltage
C - E Saturation Current
IC = 1mA, VCE = VGE
IC = 130A, VGE = 4.5V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V, VCE = 30V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
* Notes : Recommendation of RG Value : RG≥15Ω
VCC = 300V, IC = 130A,
VGE = 4.5V, RG = 15Ω
Resistive Load
450
--
--
V
--
--
10
uA
--
-- ± 0.1 uA
0.5
1.0
1.4
V
2.0
4.5
8.0
V
-- 3000 --
pF
--
45
--
pF
--
30
--
pF
--
0.08
--
us
--
1.4
--
us
--
0.1 0.5
us
--
1.1 2.0
us
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
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