SFU9120TU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Avalanche Rugged Technology

SFR/U9120
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T_C=25^oC unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-100 --
-- -0.1
-2.0 --
-- --
-- --
-- --
-- --
-- --
-- 3.4
-- 425
-- 90
-- 31
-- 11
-- 21
-- 34
-- 18
-- 16
-- 3.1
-- 6.3
-- V
-- V/^oC
-4.0 V
-100 _nA
100
-10
-100 ^µA
0.6 Ω
-- S
550
135 pF
45
30
50
ns
80
45
20
-- nC
--
V_GS=0V,I_D=-250µA
I_D=-250µA See Fig 7
V_DS=-5V,I_D=-250µA
V_GS=-20V
V_GS=20V
V_DS=-100V
V_DS=-80V,T_C=125^oC
V_GS=-10V,I_D=-2.5A O⁴
V_DS=-40V,I_D=-2.5A _O⁴
V_GS=0V,V_DS=-25V,f =1MHz
See Fig 5
V_DD=-50V,I_D=-6A,
R_G=18 Ω
See Fig 13
O⁴ O⁵
V_DS=-80V,V_GS=-10V,
I_D=-6A
See Fig 6 & Fig 12 O⁴ O⁵
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O¹ --
-- -4.9
Integral reverse pn-diode
A
-- -20
in the MOSFET
O⁴ -- -- -3.8 ^V T_J=25^oC,I_S=-4.9A,V_GS=0V
-- 105 -- ns T_J=25^oC,I_F=-6A
-- 0.4 -- µC di_F/dt=100A/µs
O⁴
Notes ;
O^{1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature}
O^{2 L=9.0mH, I}AS^{=-4.9A, V}DD^{=-25V, R}G^{=27Ω*, Starting T}J ^=25oC
O³ I_SD <_ -6A, di/dt <_ 350A/µs, V_DD <_ BV_DSS , Starting T_J =25^oC
O^{4 Pulse Test : Pulse Width = 250µs, Duty Cycle<_ 2%}
O^{5 Essentially Independent of Operating Temperature}