RHRP30120 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 30A, 1200V Hyperfast Diode

RHRP30120
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
V_F
I_F = 30 A
-
I_F = 3 0 A , T _C = 1 5 0 ^oC
-
-
3.2
V
-
2.6
V
I_R
V_R = 1200 V
-
V_R = 1200 V, T_C = 1 5 0 ^oC
-
-
250
µA
-
1
mA
t_rr
I_F = 1 A , d i _F/dt = 100 A/µs
-
I_F = 3 0 A , d i _F/dt = 100 A/µs
-
-
65
ns
-
85
ns
t_a
I_F = 3 0 A , d i _F/dt = 100 A/µs
-
t_b
I_F = 3 0 A , d i _F/dt = 100 A/µs
-
R_θJC
-
48
-
ns
22
-
ns
-
1.2
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I_R = Instantaneous reverse current.
T_rr = Reverse recovery time (See Figure 6), summation of t_a + t _b.
t_a = Time to reach peak reverse current (See Figure 6).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 6).
R_θJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
100
175^oC
10
100^oC
25^oC
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
500
100
175^oC
10
1.0
100^oC
0.1
0.01
0.001
0
25^oC
200
400
600
800
1000
V_R, REVERSE VOLTAGE (V)
1200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2
RHRP30120 Rev. C1
www.fairchildsemi.com