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RHRG75120 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – 75A, 1200V Hyperfast Diode
RHRG75120
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 75A
IF = 75A, TC = 150οC
-
-
3.2
V
-
-
2.6
V
IR
VR = 1200V
-
VR = 1200V, TC = 150οC
-
-
250
µA
-
2
mA
trr
IF = 1A, dIF/dt = 100A/µs
-
-
85
ns
IF = 75A, dIF/dt = 100A/µs
-
-
100
ns
ta
IF = 75A, dIF/dt = 100A/µs
-
60
-
ns
tb
IF = 75A, dIF/dt = 100A/µs
-
RθJC
-
25
-
ns
-
0.8
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
400
100
175oC
100oC
10
25oC
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1000
100
10
175oC
100oC
1
0.1
0
25oC
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
1200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRG75120 Rev. B