RHRG5060 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 50A, 600V Hyperfast Diode

RHRG5060
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V_F
I_F = 50A
I_F = 50A, T_C = 150^oC
-
-
2.1
V
-
-
1.7
V
I_R
V_R = 600V
V_R = 600V, T_C = 150^oC
-
-
250
µA
-
-
1.5
mA
t_rr
I_F = 1A, dI_F/dt = 100A/µs
-
-
45
ns
I_F = 50A, dI_F/dt = 100A/µs
-
-
50
ns
t_a
I_F = 50A, dI_F/dt = 100A/µs
-
25
-
ns
t_b
I_F = 50A, dI_F/dt = 100A/µs
-
20
-
ns
Q_RR
I_F = 50A, dI_F/dt = 100A/µs
-
65
-
nC
C_J
R_θJC
V_R = 10V, I_F = 0A
-
140
-
pF
-
-
1.0
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I_R = Instantaneous reverse current.
t_rr = Reverse recovery time (See Figure 9), summation of t_a + t_b.
t_a = Time to reach peak reverse current (See Figure 9).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 9).
Q_RR = Reverse recovery charge.
C_J = Junction Capacitance.
R_θJC = Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
Typical Performance Curves
300
100
175^oC 100^oC 25^oC
10
1
0
0.5
1
1.5
2
2.5
3
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
3000
1000
175^oC
100
100^oC
10
1
25^oC
0.1
0.01
0
100
200
300
400
500
600
V_R, REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRG5060 Rev. B