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RFG50N05L Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs | |||
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RFG50N05L, RFP50N05L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kâ¦) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG50N05L
RFP50N05L
50
50
50
50
50
50
130
130
±10
±10
110
110
0.88
0.88
Refer to UIS SOA Curve
-55 to 150
-55 to 150
300
300
260
260
UNITS
V
V
A
A
V
W
W/oC
-
oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t (ON)
t D(ON)
tr
t D(OFF)
tf
t (OFF)
Q G(TOT)
Q G(5)
QG(th)
RθJC
R θ JA
ID = 250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = 250µA (Figure 9)
VDS = Rated BVDSS, VGS = 0
VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC
VGS = ±10V, VDS = 0V
ID = 50A, VGS = 5V (Figure 7)
ID = 50A, VGS = 4V
VGS = 5V, RGS = 2.5â¦, RL = 1â¦
(Figures 12, 15, 16)
VGS = 0 to 10V
VGS = 0 to 5V
VGS = 0 to 1V
VDD = 40V, ID = 50A
RL = 0.8â¦
(Figures 17, 18)
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage (Note 2)
V SD
ISD = 50A
-
Diode Reverse Recovery Time
t rr
ISD = 50A, dISD/dt = 100A/µs
-
NOTES:
2. Pulsed: pulse duration = 300µs maximum, duty cycle = 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
50
-
-
V
1
-
2
V
-
-
25 µA
-
- 250 µA
-
- ±100 nA
-
- 0.022 â¦
-
- 0.027 â¦
-
- 100 ns
-
15
-
ns
-
50
-
ns
-
50
-
ns
-
15
-
ns
-
- 100 ns
-
- 140 nC
-
-
80 nC
-
-
6
nC
-
-
1.14 oC/W
-
-
80 oC/W
TYP
MAX UNITS
-
1.5
V
-
1.25
ns
©2002 Fairchild Semiconductor Corporation
RFG50N05L, RFP50N05L Rev. B
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