NDS8928 Datasheet, PDF (2/13 Pages) Fairchild Semiconductor – Dual N & P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BV_DSS
I_DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = -250 µA
V_DS = 16 V, V_GS = 0 V
V_DS = -16 V, V_GS = 0 V
I_GSSF
Gate - Body Leakage, Forward
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
V_GS(th)
Gate Threshold Voltage
V_GS = 8 V, V_DS = 0 V
V_GS = -8 V, V_DS= 0 V
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = -250 µA
R_DS(ON)
Static Drain-Source On-Resistance
V_GS = 4.5 V, I_D = 5.5 A
V_GS = 2.7 V, I_D = 5 A
V_GS = -4.5 V, I_D = -3.8 A
I_D(on)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_GS = -2.7 V, I_D = -3.2 A
V_GS = 4.5 V, V_DS = 5 V
V_GS = 2.7 V, V_DS = 5 V
V_GS = -4.5 V, V_DS = -5 V
V_GS = -2.7 V, V_DS = -5 V
V_DS = 10 V, I_D = 5.5 A
V_DS = -10 V, I_D = -3.8 A
N-Channel
V_DS = 10 V, V_GS = 0 V,
f = 1.0 MHz
P-Channel
V_DS = -10 V, V_GS = 0 V,
f = 1.0 MHz
Type Min Typ Max Units
T_J = 55^oC
T_J = 55^oC
N-Ch 20
P-Ch -20
N-Ch
P-Ch
All
All
V
V
1
µA
10
µA
-1
µA
-10
µA
100
nA
-100 nA
N-Ch 0.4 0.6
1
V
T_J = 125^oC
0.3 0.35 0.8
P-Ch -0.4 -0.7
-1
T_J = 125^oC
-0.3 -0.5 -0.8
N-Ch
0.029 0.035 _Ω
T_J = 125^oC
0.04 0.063
0.035 0.045
T_J = 125^oC
P-Ch
0.06
0.085
0.082
0.07
0.126
0.1
N-Ch 20
A
10
P-Ch -15
-5
N-Ch
14
S
P-Ch
9
N-Ch
760
pF
P-Ch
1120
N-Ch
440
pF
P-Ch
470
N-Ch
160
pF
P-Ch
145
NDS8928 Rev.D