NDS351N Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel Logic Level Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BV_DSS
I_DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V_GS = 0 V, I_D = 250 µA
V_DS = 24 V, V_GS = 0 V
I_GSSF
Gate - Body Leakage, Forward
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
V_GS(th)
Gate Threshold Voltage
V_GS = 12 V, V_DS = 0 V
V_GS = -12 V, V_DS = 0 V
V_DS = V_GS, I_D = 250 µA
R_DS(ON)
Static Drain-Source On-Resistance
V_GS = 4.5 V, I_D = 1.1 A
I_D(ON)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
t_d(on)
Turn - On Delay Time
t_r
Turn - On Rise Time
t_d(off)
Turn - Off Delay Time
t_f
Turn - Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_GS = 10 V, I_D = 1.4 A
V_GS = 4.5 V, V_DS = 5 V
V_DS = 5 V, I_D = 1.1 A
V_DS = 10 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = 10 V, I_D = 1 A,
V_GS = 10 V, R_GEN = 50 Ω
V_DS = 10 V, I_D = 1.1 A,
V_GS = 5 V
T_J =125°C
T_J =125°C
T_J =125°C
Min Typ Max
30
1
10
100
-100
0.8 1.6
2
0.5 1.3 1.5
0.185 0.25
0.26 0.37
0.135 0.16
5
2.5
140
80
18
9
15
16
30
26
50
19
40
2
3.5
1
2
Units
V
µA
µA
nA
nA
V
Ω
A
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
NDS351N Rev. E2