NDP6051 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_C = 25°C unless otherwise noted)
Symbol Parameter
Conditions
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W _DSS
Single Pulse Drain-Source Avalanche
Energy
V_DD = 25 V, I_D = 48 A
I_AR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BV_DSS
I_DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V_GS = 0 V, I_D = 250 µA
V_DS = 50 V, V_GS = 0 V
I_GSSF
Gate - Body Leakage, Forward
I_GSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 1)
V_GS(th)
Gate Threshold Voltage
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
V_DS = V_GS, I_D = 250 µA
R_DS(ON)
Static Drain-Source On-Resistance
V_GS = 10 V, I_D = 24 A
I_D(on)
On-State Drain Current
g_FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 1)
t_D(on)
Turn - On Delay Time
t_r
Turn - On Rise Time
t_D(off)
Turn - Off Delay Time
t_f
Turn - Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_GS = 10 V, V_DS = 10 V
V_DS = 10 V, I_D = 24 A
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
V_DD = 30 V, I_D = 48 A,
V_GS = 10 V, R_GEN = 7.5 Ω
V_DS = 24 V,
I_D = 48 A, V_GS = 10V
Min Typ Max Units
300 mJ
48
A
50
T_J = 125°C
V
250 µA
1
mA
100 nA
-100 nA
2
2.8
4
V
T_J = 125°C 1.4 2.2
3.6
0.018 0.022 _Ω
T_J = 125°C
0.03 0.04
60
A
14
S
1220
pF
520
pF
190
pF
10
20
nS
132 250 nS
28
55
nS
80 150 nS
37
53
nC
8
22
NDP6051 Rev. C1