MUR840 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 8A, 400V - 600V Ultrafast Diodes

MUR840, MUR860, RURP840, RURP860
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
MUR840, RURP840
MUR860, RURP860
SYMBOL
TEST CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V_F
I_F = 8A
I_F = 8A, T_C = 150^oC
-
-
1.3
-
-
1.5
V
-
-
1.0
-
-
1.2
V
I_R
V_R = 400V
-
-
100
-
-
-
µA
V_R = 600V
V_R = 400V, T_C = 150^oC
V_R = 600V, T_C = 150^oC
-
-
-
-
-
100
µA
-
-
500
-
-
-
µA
-
-
-
-
-
500
µA
t_rr
I_F = 1A, dI_F/dt = 200A/µs
-
-
60
-
-
60
ns
I_F = 8A, dI_F/dt = 200A/µs
-
-
70
-
-
70
ns
t_a
I_F = 8A, dI_F/dt = 200A/µs
-
32
-
-
32
-
ns
t_b
I_F = 8A, dI_F/dt = 200A/µs
-
21
-
-
21
-
ns
Q_RR
I_F = 8A, dI_F/dt = 200A/µs
-
195
-
-
195
-
nC
C_J
R_θJC
V_R = 10V, I_F = 0A
-
25
-
-
-
2
-
25
-
pF
-
-
2
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I_R = Instantaneous reverse current.
t_rr = Reverse recovery time (See Figure 9), summation of t_a + t_b.
t_a = Time to reach peak reverse current (See Figure 9).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 9).
Q_RR = Reverse recovery charge.
C_J = Junction Capacitance.
R_θJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
40
10
500
100
175^oC
100^oC
10
100^oC
175^oC
1
25^oC
0.5
0
0.5
1
1.5
2
2.5
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1
0.1
25^oC
0.01
0
100
200
300
400
500
600
V_R, REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev. B