MPS3702_01 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V_(BR)EBO
I_CBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
I_C = 10 mA, I_B = 0
I_C = 100 µA, I_E = 0
IE = 100 µA, IC = 0
V_CB = 20 V, I_E = 0
V_EB = 3.0 V, I_C = 0
ON CHARACTERISTICS*
h_FE
DC Current Gain
V_CE(sat)
VBE(_on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V_CE = 5.0 V, I_C = 50 mA
I_C = 50 mA, I_B = 5.0 mA
I_C = 50 mA, V_CE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
C_ob
Output Capacitance
fT
Current Gain - Brandwidth Product
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CB = 10 V, f = 1.0 MHz
I_C = 50 mA, V_CE = 5.0 V,
f = 20 MHz
25
V
40
V
5.0
V
100
nA
100
nA
60
300
0.25
V
0.6
1.0
V
12
pF
100
MHz