MOC256 Datasheet, PDF (2/7 Pages) Motorola, Inc – SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

AC INPUT PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
MOC256-M
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min
EMITTER
Input Forward Voltage
Input Capacitance
DETECTOR
Collector-Emitter Dark Current
Collector-Base Dark Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Collector-Base Capacitance
Emitter-Base Capacitance
COUPLED
Current Transfer Ratio⁽¹⁾
Output-Collector Current Symmetry
Collector-Emitter Saturation Voltage
Isolation Surge Voltage^(2,3)
Isolation Resistance⁽³⁾
Isolation Capacitance⁽³⁾
(I_F = ±10 mA)
V_F
—
(V = 0 V, f = 1 MHz)
C_J
—
(V_CE = 10 V, T_A = 25°C) I_CEO1
—
(V_CE = 10 V, T_A = 100°C) I_CEO2
—
(V_CB = 10V) I_CBO
—
(I_C = 10 mA) BV_CEO
30
(I_C = 100 µA) BV_CBO
70
(I_E = 100 µA) BV_ECO
5
(f = 1.0 MHz, V_CE = 0) C_CE
—
(f = 1.0 MHz, V_CB = 0) C_CB
—
(f = 1.0 MHz, V_EB = 0) C_EB
—
(I_F = ±10 mA, V_CE = 10 V) CTR
( ) (IC @ IF = +10 mA, VCE = 10V)
(I_C @ I_F = -10 mA, V_CE = 10V)
(I_C = 0.5 mA, I_F = ±10 mA)
—
V_{CE (sat)}
(f = 60 Hz AC Peak, t = min) V_ISO
(V = 500 V) R_ISO
(V = 0 V, f = 1 MHz) C_ISO
20
0.5
—
2500
10¹¹
—
Typ*
1.2
20
1.0
1.0
0.2
100
120
10
7
20
10
150
0.1
—
—
0.2
Max Unit
1.5
V
—
pF
100
nA
—
µA
—
nA
—
nA
—
V
—
V
—
pF
—
pF
—
pF
—
%
2.0
—
0.4
V
— Vac(rms)
—
Ω
—
pF
* Typical values at T_A = 25°C
NOTE:
1. Current Transfer Ratio (CTR) = I_C/I_F x 100%.
2. Isolation Surge Voltage, V_ISO, is an internal device dielectric breakdown rating.
3. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 7
4/10/03