MJE210 Datasheet, PDF (2/4 Pages) STMicroelectronics – SILICON PNP TRANSISTOR

Typical Characteristics
1000
100
10
VCE = -2V
VCE = -1V
1
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-1000
-100
f=0.1MHZ
I_E=0
-10
-1
-0.1
-1
-10
-100
V_CB[V], COLLECTOR BASE VOLTAGE
Figure 3. Collector Output Capacitance
24
21
18
15
12
9
6
3
0
0
25
50
75
100
125
150
175
T_C[^oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
-10
-1
V_BE(sat)
-0.1
V_CE(sat)
I = 10 I
C
B
-0.01
-0.01
-0.1
-1
-10
I_C[A], COLLECTOR CURRENT
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-100
-10
100_µs
5ms ^1m50s0µs
DC
-1
-0.1
-1
-10
-100
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A1, February 2001