L14P1 Datasheet, PDF (2/4 Pages) QT Optoelectronics – HERMETIC SILICON PHOTOTRANSISTOR

HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^{(3,4,5 and 6)}
Soldering Temperature (Flow)^{(3,4 and 6)}
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (T_A = 25°C)⁽¹⁾
Power Dissipation (T_C = 25°C)⁽²⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
V_CEO
V_CBO
V_EBO
P_D
P_D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
30
40
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm² is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm².
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14P1
On-State Collector Current L14P2
On-State Photodiode Current
Rise Time
Fall Time
Saturation Voltage L14P1
Saturation Voltage L14P2
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
I_C = 10 mA, Ee = 0
BV_CEO
30
—
V
I_E = 100 µA, Ee = 0
BV_EBO
5.0
—
V
I_C = 100 µA, Ee = 0
BV_CBO
40
—
V
V_CE = 12 V, Ee = 0
I_CEO
—
100
nA
θ
±8
Degrees
Ee = 0.5 mW/cm², V_CE = 5 V^(7,8)
I_C(ON)
6.5
—
mA
Ee = 0.5 mW/cm², V_CE = 5 V^(7,8)
I_C(ON)
13.0
mA
Ee = 0.3 mW/cm², V_CB = 5 V
I_CB(ON)
6.0
µA
I_C = 10 mA, V_CC = 5 V, R_L =100 Ω
t_r
10
µs
I_C = 10 mA, V_CC = 5 V, R_L =100 Ω
t_f
I_C = 0.8 mA, Ee = 0.6 mW/cm^2(7,8)
V_CE(SAT)
—
I_C = 1.6 mA, Ee = 0.6 mW/cm^2(7,8)
V_CE(SAT)
—
12
µs
0.40
V
0.40
V
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