KSP92TA Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – KSP92/93 PNP Epitaxial Silicon Transistor

Typical Characteristics
1000
100
VCE = -10V
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
100
Cib
10
Cob
1
-0.1
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Capacitance
-500
dc
-100
KSP93
1.5 WATT THERMAL
LIMITATION@TC=25℃
625mW THERMAL
LIMITATION@TA=25℃
BONDING WIRE LIMITATION
-10 SECOND BREAKDOWN
LIMITATION
-5 ^Tj=150℃
-3
-10
-100
-400
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Active-Regio Safe Operating Area
©2001 Fairchild Semiconductor Corporation
-10000
-1000
-100
VBE(sat)
VCE(sat)
IC = 10 IB
-10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 2. Saturation Voltage
1000
VCE = -20V
f = 100MHz
100
10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A1, July 2001