KSD526_06 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

Typical Characteristics
4.0
I_B = 200mA ^IB ^{= 160mA}
I_B = 240mA
I_B = 120mA
I_B = 100mA
3.2
I_B = 80mA
I_B = 60mA
2.4
I_B = 40mA
1.6
I_B = 20mA
0.8
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
V_CE = 5V
10
1E-3
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 2. DC current Gain
4
V_CE = 5V
3
2
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_BE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
10
1
0.1
V_CE(sat)
I_C = 10 I_B
0.01
0.01
0.1
1
10
I_C[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
100
10 ^{ICMAX. (pulse)}
I_C MAX. (continuous)
100ms10ms 1ms
1S
1
(T
C
=2D5¡CÉ)
0.1
1
10
100
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T_C[^oC], CASE TEMPERATURE
Figure 6. Power Derating
KSD526 Rev. A1
2
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