J210 Datasheet, PDF (2/6 Pages) NXP Semiconductors – N-channel field-effect transistors

N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
IG S S
VGS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
ID S S
Zero-Gate Voltage Drain Current*
SMALL SIGNAL CHARACTERISTICS
gfs
Common Source Forward
Transconductance
goss
Common Source Output
Conductance
*Pulse Test: Pulse Width ≤ 300 µS
IG = 1.0 µA, V DS = 0
VGS = 15 V, VDS = 0
VDS = 15 V, ID = 1.0 nA
- 25
V
- 100
pA
210
-1.0
-3.0
V
211
- 2.5
- 4.5
V
212
- 4.0
- 6.0
V
VDS = 15 V, V GS = 0
210
2.0
15
mA
211
7.0
20
mA
212
15
40
mA
VDS = 15 V, V GS = 0, f = 1.0 kHz
210
211
212
VDS = 15 V, V GS = 0, f = 1.0 kHz
4000
6000
7000
12,000
12,000
12,000
200
µmhos
µmhos
µmhos
µmhos
Typical Characteristics
Parameter Interactions
Common Drain-Source