J111_01 Datasheet, PDF (2/13 Pages) Fairchild Semiconductor – N-Channel Switch

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
N-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IG = - 1.0 µA, VDS = 0
- 35
V
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
- 1.0
nA
VGS(off)
ID(off)
Gate-Source Cutoff Voltage
Drain Cutoff Leakage Current
VDS = 5.0 V, ID = 1.0 µA
111 - 3.0
- 10
V
112 - 1.0
- 5.0
V
113 ^{- 0.5}
- 3.0
V
VDS = 5.0 V, VGS = - 10 V
1.0
nA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
111
20
mA
112 5.0
mA
113
2.0
mA
111
30
Ω
112
50
Ω
113
100
Ω
SMALL-SIGNAL CHARACTERISTICS
C_dg(on)
C_sg(on)
C_dg(off)
C_sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
V_DS = 0, V_GS = 0, f = 1.0 MHz
V_DS = 0, V_GS = - 10 V, f = 1.0 MHz
V_DS = 0, V_GS = - 10 V, f = 1.0 MHz
28
pF
5.0
pF
5.0
pF
Typical Characteristics
Common Drain-Source
10
V _GS = 0 V
8
- 0.2 V
T_A = 25°C
TYP V _GS(off) = - 2.0 V
- 0.4 V
6
- 0.6 V
4
- 0.8 V
- 1.0 V
2
- 1.4 V
- 1.2 V
0
0
0.4
0.8
1.2
1.6
2
V_DS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
100
r _DS
50
50
20
g _fs
20
10
_^50.5
I _DSS
I DSS , g fs @ VDS = 15V,
V GS = 0 PULSED
r DS @ 1.0 mA, VGS = 0
V GS(off) @ V _DS = 15V,
I _D = 1.0 nA
_₁
_₂
_₅
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
10
_
5
10