IRLR220ATF Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Advvanced Power Mosfet

IRLR/U220A
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32:(5 026)(7
Electrical Characteristics (T_C=25°C unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
200 -- -- V
-- 0.18 -- V/°C
1.0 -- 2.0 V
-- -- 100 _nA
-- -- -100
-- -- 10
-- -- 100 ^µA
-- -- 0.8 Ω
-- 3.3 --
-- 330 430
-- 55 70 _pF
-- 25 30
-- 8 25
-- 6 20
ns
-- 24 60
-- 6 20
-- 10.3 15
-- 2.0 -- nC
-- 4.4 --
V_GS=0V,I_D=250µA
I_D=250µA See Fig 7
V_DS=5V,I_D=250µA
V_GS=20V
V_GS=-20V
V_DS=200V
V_DS=160V,T_C=125°C
V_GS=5V,I_D=2.3A
(4)
V_DS=40V,I_D=2.3A (4)
V_GS=0V,V_DS=25V,f =1MHz
See Fig 5
V_DD=100V,I_D=5A,
R_G=9Ω
See Fig 13
(4) (5)
V_DS=160V,V_GS=5V,
I_D=5A
See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 4.6
Integral reverse pn-diode
A
-- 16
in the MOSFET
(4) -- -- 1.5 V _{TJ=25°C,IS=4.6A,VGS=0V}
-- 140 -- ns T_J=25°C,I_F=5A
-- 0.59 -- µC di_F/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, I_AS=4.6A, V_DD=50V, R_G=27Ω, Starting T_J =25°C
(3) I_SD ≤ 5A, di/dt ≤ 180A/µs, V_DD ≤ BV_DSS , Starting T_J =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
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